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BCM847DS,115 Технические параметры

Nexperia USA Inc.  BCM847DS,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 380mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 250MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number BCM847
Pin Count 6
Polarity NPN
Element Configuration Dual
Power Dissipation 380mW
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Transistor Type 2 NPN (Dual) Matched Pair
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BCM847DS,115 Документы

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