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BCM856DS,115 Технические параметры

Nexperia USA Inc.  BCM856DS,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 65V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Power Dissipation 380mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number BCM856
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 380mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 175MHz
Transistor Type 2 PNP (Dual) Matched Pair
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Transition Frequency 175MHz
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BCM856DS,115 Документы

BCM856DS,115 brand manufacturers: Nexperia USA Inc., Anli stock, BCM856DS,115 reference price.Nexperia USA Inc.. BCM856DS,115 parameters, BCM856DS,115 Datasheet PDF and pin diagram description download.You can use the BCM856DS,115 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find BCM856DS,115 pin diagram and circuit diagram and usage method of function,BCM856DS,115 electronics tutorials.You can download from the Anli.