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BCM857BS,115 Технические параметры

Nexperia USA Inc.  BCM857BS,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage -45V
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Tolerance 5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BCM857
Свойство продукта Значение свойства
Pin Count 6
Polarity PNP
Voltage 45V
Element Configuration Dual
Current 1A
Power Dissipation 300mW
Transistor Application AMPLIFIER
Test Current 5mA
Gain Bandwidth Product 175MHz
Zener Voltage 39V
Transistor Type 2 PNP (Dual) Matched Pair
Collector Emitter Voltage (VCEO) -45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Transition Frequency 175MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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