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BCM857BV,115 Технические параметры

Nexperia USA Inc.  BCM857BV,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Form FLAT
Frequency 175MHz
Base Part Number BCM857
Свойство продукта Значение свойства
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 175MHz
Transistor Type 2 PNP (Dual) Matched Pair
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Transition Frequency 175MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 600μm
Length 1.7mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BCM857BV,115 Документы

BCM857BV,115 brand manufacturers: Nexperia USA Inc., Anli stock, BCM857BV,115 reference price.Nexperia USA Inc.. BCM857BV,115 parameters, BCM857BV,115 Datasheet PDF and pin diagram description download.You can use the BCM857BV,115 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find BCM857BV,115 pin diagram and circuit diagram and usage method of function,BCM857BV,115 electronics tutorials.You can download from the Anli.