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BCP69-25,115 Технические параметры

Nexperia USA Inc.  BCP69-25,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 1.4W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 140MHz
Base Part Number BCP69
Pin Count 4
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 1.35W
Case Connection COLLECTOR
Power - Max 650mW
Forward Current 500mA
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Forward Voltage 550mV
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
Max Repetitive Reverse Voltage (Vrrm) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Transition Frequency 40MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
Max Forward Surge Current (Ifsm) 2A
Height 1.7mm
Length 6.7mm
Width 3.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

BCP69-25,115 Документы

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