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BSH205G2AR Технические параметры
Nexperia USA Inc. BSH205G2AR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | TO-236AB | |
| Mfr | Nexperia USA Inc. | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 2.6A (Ta) | |
| Power Dissipation (Max) | 610mW (Ta), 10W (Tc) | |
| Base Product Number | BSH205 | |
| Continuous Drain Current Id | 2.6 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | AEC-Q101 | |
| Vds - Drain-Source Breakdown Voltage | 20 V | |
| Typical Turn-On Delay Time | 5 ns | |
| Vgs th - Gate-Source Threshold Voltage | 900 mV | |
| Pd - Power Dissipation | 1.3 W | |
| Transistor Polarity | P-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | |
| Unit Weight | 0.000282 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 5 S | |
| Channel Mode | Enhancement | |
| Part # Aliases | 934661354215 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Nexperia | |
| Brand | Nexperia | |
| Qg - Gate Charge | 4.6 nC | |
| Rds On - Drain-Source Resistance | 118 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 35 ns | |
| Id - Continuous Drain Current | 2.6 A | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | MOSFETs | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 1.3 | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 118mOhm @ 2.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 421 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V | |
| Rise Time | 13 ns | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Vgs (Max) | ±8V | |
| Product Type | MOSFET | |
| Transistor Type | 1 P-channel Trench MOSFET | |
| Channel Type | P Channel | |
| FET Feature | - | |
| Product Category | MOSFET |
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