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BSH205G2R Технические параметры

Nexperia USA Inc.  BSH205G2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 480mW Ta
Turn Off Delay Time 43 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 418pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.17Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSH205G2R Документы

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