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Nexperia USA Inc. BSH205G2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 2A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 480mW Ta | |
| Turn Off Delay Time | 43 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2015 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 5 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 170m Ω @ 2A, 4.5V | |
| Vgs(th) (Max) @ Id | 950mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 418pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V | |
| Rise Time | 14ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±8V | |
| Fall Time (Typ) | 16 ns | |
| Continuous Drain Current (ID) | 2A | |
| Gate to Source Voltage (Vgs) | 8V | |
| Drain Current-Max (Abs) (ID) | 2A | |
| Drain-source On Resistance-Max | 0.17Ohm | |
| DS Breakdown Voltage-Min | 20V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |