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Nexperia USA Inc. BUK6C2R1-55C,118 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | |
| Mounting Type | Surface Mount | |
| Number of Pins | 7Pins | |
| Supplier Device Package | D2PAK | |
| Current - Continuous Drain (Id) @ 25℃ | 228A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Turn Off Delay Time | 412 ns | |
| Power Dissipation (Max) | 300W Tc | |
| Number of Elements | 1 Element | |
| Published | 2010 | |
| Series | Automotive, AEC-Q101, TrenchMOS™ | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~175°C TJ | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 300W | |
| Turn On Delay Time | 43 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 90A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 16000pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 253nC @ 10V | |
| Rise Time | 206ns | |
| Drain to Source Voltage (Vdss) | 55V | |
| Vgs (Max) | ±16V | |
| Fall Time (Typ) | 190 ns | |
| Continuous Drain Current (ID) | 228A | |
| Gate to Source Voltage (Vgs) | 16V | |
| Max Dual Supply Voltage | 55V | |
| Drain to Source Breakdown Voltage | 55V | |
| Input Capacitance | 16nF | |
| Drain to Source Resistance | 2.3mOhm | |
| Rds On Max | 2.3 mΩ | |
| RoHS Status | RoHS Compliant | |
| Radiation Hardening | No |