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BUK6C3R3-75C,118 Технические параметры

Nexperia USA Inc.  BUK6C3R3-75C,118 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Surface Mount YES
Number of Pins 7Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 181A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 384 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 7
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G6
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 15800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 253nC @ 10V
Rise Time 217ns
Vgs (Max) ±16V
Fall Time (Typ) 165 ns
Continuous Drain Current (ID) 181A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Drain-source On Resistance-Max 0.0051Ohm
Drain to Source Breakdown Voltage 75V
Avalanche Energy Rating (Eas) 560 mJ
RoHS Status RoHS Compliant

BUK6C3R3-75C,118 Документы

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