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BUK6D30-40EX Технические параметры
Nexperia USA Inc. BUK6D30-40EX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Supplier Device Package | DFN2020MD-6 | |
| Mfr | Nexperia USA Inc. | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 6A (Ta), 18A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Power Dissipation (Max) | 2W (Ta), 19W (Tc) | |
| Base Product Number | BUK6D30 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | AEC-Q101 | |
| Continuous Drain Current Id | 18A | |
| Vds - Drain-Source Breakdown Voltage | 40 V | |
| Typical Turn-On Delay Time | 4 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Pd - Power Dissipation | 19 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 19 S | |
| Channel Mode | Enhancement | |
| Part # Aliases | 934661473115 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Nexperia | |
| Brand | Nexperia | |
| Qg - Gate Charge | 8 nC | |
| Rds On - Drain-Source Resistance | 30 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 20 ns | |
| Id - Continuous Drain Current | 18 A | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | MOSFETs | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 19W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| Rise Time | 2 ns | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Vgs (Max) | ±20V | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Channel Type | N Channel | |
| FET Feature | - | |
| Product Category | MOSFET |
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