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Nexperia USA Inc. BUK7515-100A,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Contact Plating | Tin | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Surface Mount | NO | |
Number of Pins | 3Pins | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 75A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 300W Tc | |
Turn Off Delay Time | 150 ns | |
Operating Temperature | -55°C~175°C TJ | |
Packaging | Tube | |
Series | TrenchMOS™ | |
JESD-609 Code | e3 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Pin Count | 3 |
Свойство продукта | Значение свойства | |
---|---|---|
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 300W | |
Case Connection | DRAIN | |
Turn On Delay Time | 35 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 15m Ω @ 25A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 25V | |
Rise Time | 85ns | |
Vgs (Max) | ±20V | |
Fall Time (Typ) | 70 ns | |
Continuous Drain Current (ID) | 75A | |
JEDEC-95 Code | TO-220AB | |
Gate to Source Voltage (Vgs) | 20V | |
Max Dual Supply Voltage | 100V | |
Drain to Source Breakdown Voltage | 100V | |
Pulsed Drain Current-Max (IDM) | 240A | |
Radiation Hardening | No | |
RoHS Status | RoHS Compliant |