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BUK7516-55A,127 Технические параметры

Nexperia USA Inc.  BUK7516-55A,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 65.7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 138W Tc
Turn Off Delay Time 57 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
HTS Code 8541.29.00.75
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 138W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2245pF @ 25V
Rise Time 70ns
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) 3.8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain Current-Max (Abs) (ID) 65.7A
Drain-source On Resistance-Max 0.016Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 120 mJ
Radiation Hardening No
RoHS Status RoHS Compliant

BUK7516-55A,127 Документы

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