Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BUK7K6R2-40EX Технические параметры
Nexperia USA Inc. BUK7K6R2-40EX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Package / Case | SOT-1205, 8-LFPAK56 | |
| Mounting Type | Surface Mount | |
| Mount | Surface Mount | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Turn Off Delay Time | 21 ns | |
| Number of Elements | 2 Elements | |
| Published | 2013 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~175°C TJ | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Max Power Dissipation | 68W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 8 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PDSO-G6 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 9.5 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 5.8m Ω @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2210pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 32.3nC @ 10V | |
| Rise Time | 16ns | |
| Drain to Source Voltage (Vdss) | 40V | |
| Fall Time (Typ) | 17 ns | |
| Continuous Drain Current (ID) | 40A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 40V | |
| Avalanche Energy Rating (Eas) | 157 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BUK7K6R2-40EX Документы
- DatasheetsBUK7K6R2-40E
- PCN PackagingPack/Label Update 30/Nov/2016 Label Chg 12/Mar/2017
- RohsStatementNXP-Semiconductors-company-12.pdf
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ