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BUK7S2R5-40HJ Технические параметры

Nexperia USA Inc.  BUK7S2R5-40HJ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case SOT-1235
Supplier Device Package LFPAK88 (SOT1235)
Mfr Nexperia USA Inc.
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 140A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 135W (Ta)
MSL -
Qualification AEC-Q101
Continuous Drain Current Id 140A
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-On Delay Time 10 ns
Vgs th - Gate-Source Threshold Voltage 4.3 V
Pd - Power Dissipation 135 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 10 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Part # Aliases 934661317118
Manufacturer Nexperia
Свойство продукта Значение свойства
Brand Nexperia
Qg - Gate Charge 38 nC
Rds On - Drain-Source Resistance 2.5 mOhms
RoHS Details
Typical Turn-Off Delay Time 22 ns
Id - Continuous Drain Current 140 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 135W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.51mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3793 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Rise Time 8.5 ns
Drain to Source Voltage (Vdss) 40 V
Vgs (Max) +20V, -10V
Product Type MOSFET
Channel Type N Channel
FET Feature -
Product Category MOSFET
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