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BUK9510-100B,127 Технические параметры

Nexperia USA Inc.  BUK9510-100B,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 250 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 2017
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 60 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 11045pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 5V
Rise Time 110ns
Vgs (Max) ±15V
Fall Time (Typ) 94 ns
Continuous Drain Current (ID) 75A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 629 mJ
Radiation Hardening No
RoHS Status RoHS Compliant

BUK9510-100B,127 Документы

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