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BUK9529-100B,127 Технические параметры

Nexperia USA Inc.  BUK9529-100B,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 46A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 157W Tc
Turn Off Delay Time 96 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 157W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Rise Time 86ns
Vgs (Max) ±15V
Fall Time (Typ) 46 ns
Continuous Drain Current (ID) 46A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 186A
Avalanche Energy Rating (Eas) 152 mJ
Radiation Hardening No
RoHS Status RoHS Compliant

BUK9529-100B,127 Документы

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