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BUK9609-40B,118 Технические параметры

Nexperia USA Inc.  BUK9609-40B,118 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 157W Tc
Turn Off Delay Time 108 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Terminal Form GULL WING
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 157W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 106ns
Vgs (Max) ±15V
Fall Time (Typ) 89 ns
Continuous Drain Current (ID) 95A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 40V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 241 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant

BUK9609-40B,118 Документы

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