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BUK9K35-60E,115 Технические параметры

Nexperia USA Inc.  BUK9K35-60E,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-1205, 8-LFPAK56
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 3.9 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Additional Feature AVALANCHE RATED
Max Power Dissipation 38W
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G6
Свойство продукта Значение свойства
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection DRAIN
Turn On Delay Time 20.5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1081pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14.2nC @ 10V
Rise Time 3.7ns
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.035Ohm
Pulsed Drain Current-Max (IDM) 90A
Avalanche Energy Rating (Eas) 19.5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant

BUK9K35-60E,115 Документы

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