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Nexperia USA Inc. BUK9K52-60E,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-1205, 8-LFPAK56 | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 10.7 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101, TrenchMOS™ | |
| Published | 2014 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 32W | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | 20 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 8 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 32W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 6.2 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 49m Ω @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 725pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V | |
| Rise Time | 10.1ns | |
| Fall Time (Typ) | 9 ns | |
| Continuous Drain Current (ID) | 16A | |
| Gate to Source Voltage (Vgs) | 10V | |
| Max Dual Supply Voltage | 60V | |
| Drain-source On Resistance-Max | 0.055Ohm | |
| Pulsed Drain Current-Max (IDM) | 64A | |
| Avalanche Energy Rating (Eas) | 11.9 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | ROHS3 Compliant |