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BUK9K6R2-40E,115 Технические параметры

Nexperia USA Inc.  BUK9K6R2-40E,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-1205, 8-LFPAK56
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 44.4 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Max Power Dissipation 68W
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-G6
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3281pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35.4nC @ 10V
Rise Time 7.1ns
Fall Time (Typ) 19.8 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 166 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant

BUK9K6R2-40E,115 Документы

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