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BUK9Y14-80E,115 Технические параметры

Nexperia USA Inc.  BUK9Y14-80E,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 62A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V
Number of Elements 1 Element
Power Dissipation (Max) 147W Tc
Turn Off Delay Time 45.3 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4640pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 28.9nC @ 5V
Rise Time 24.6ns
Vgs (Max) ±10V
Fall Time (Typ) 24.7 ns
Continuous Drain Current (ID) 62A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 79.6 mJ
RoHS Status ROHS3 Compliant

BUK9Y14-80E,115 Документы

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