[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

BUK9Y19-55B,115 Технические параметры

Nexperia USA Inc.  BUK9Y19-55B,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 46A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V
Number of Elements 1 Element
Power Dissipation (Max) 85W Tc
Turn Off Delay Time 44 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 85W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1992pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Rise Time 180ns
Vgs (Max) ±15V
Fall Time (Typ) 134 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 80 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Просмотр сходства

BUK9Y19-55B,115 Документы

BUK9Y19-55B,115 brand manufacturers: Nexperia USA Inc., Anli stock, BUK9Y19-55B,115 reference price.Nexperia USA Inc.. BUK9Y19-55B,115 parameters, BUK9Y19-55B,115 Datasheet PDF and pin diagram description download.You can use the BUK9Y19-55B,115 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BUK9Y19-55B,115 pin diagram and circuit diagram and usage method of function,BUK9Y19-55B,115 electronics tutorials.You can download from the Anli.