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BZT52-C12X Технические параметры
Nexperia USA Inc. BZT52-C12X technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Zener - Single | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOD-123 | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 0.35W | |
| Operating Temperature | -55°C~150°C | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| Tolerance | ±5.4% | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PDSO-G2 | |
| Polarity | UNIDIRECTIONAL | |
| Configuration | SINGLE | |
| Diode Type | ZENER DIODE | |
| Current - Reverse Leakage @ Vr | 100nA @ 8V | |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 10mA | |
| Power - Max | 350mW | |
| Impedance-Max | 10Ohm | |
| Reference Voltage | 12V | |
| Voltage - Zener (Nom) (Vz) | 12.05V | |
| Voltage Tol-Max | 6.06% | |
| Working Test Current | 5mA | |
| RoHS Status | ROHS3 Compliant |
BZT52-C12X Документы
- DatasheetsBZT52 Series
Индекс :
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