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Nexperia USA Inc. NX1029X,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Number of Pins | 6Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 330mA 170mA | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 48 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101, TrenchMOS™ | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 500mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 6 | |
| Power Dissipation | 500mW | |
| FET Type | N and P-Channel | |
| Rds On (Max) @ Id, Vgs | 7.5 Ω @ 100mA, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V | |
| Rise Time | 11ns | |
| Drain to Source Voltage (Vdss) | 60V 50V | |
| Fall Time (Typ) | 25 ns | |
| Continuous Drain Current (ID) | 170mA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -50V | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |