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NX138AKMYL Технические параметры

Nexperia USA Inc.  NX138AKMYL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package SOT-883
Mfr Nexperia USA Inc.
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Power Dissipation (Max) 340mW (Ta), 2.3W (Tc)
MSL -
Qualification -
Continuous Drain Current Id 270mA
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-On Delay Time 1 ns
Vgs th - Gate-Source Threshold Voltage 1.5 V
Pd - Power Dissipation 648 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 10000
Mounting Styles SMD/SMT
Forward Transconductance - Min 0.4 S
Channel Mode Enhancement
Part # Aliases 934662483315
Свойство продукта Значение свойства
Manufacturer Nexperia
Brand Nexperia
Qg - Gate Charge 400 pC
Rds On - Drain-Source Resistance 4.2 Ohms
RoHS Details
Typical Turn-Off Delay Time 3 ns
Id - Continuous Drain Current 270 mA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 340mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 10 V
Rise Time 1 ns
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±20V
Product Type MOSFET
Channel Type N Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
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