Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NX138BKHH Технические параметры
Nexperia USA Inc. NX138BKHH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 3-XFDFN | |
| Supplier Device Package | DFN0606-3 | |
| Mfr | Nexperia USA Inc. | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 380mA (Ta) | |
| Power Dissipation (Max) | 380mW (Ta), 2.8W (Tc) | |
| Base Product Number | NX138 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | - | |
| Continuous Drain Current Id | 380mA | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Typical Turn-On Delay Time | 7.9 ns | |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V | |
| Pd - Power Dissipation | 2.8 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 10000 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 0.7 S | |
| Channel Mode | Enhancement | |
| Part # Aliases | 934661737125 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Nexperia | |
| Brand | Nexperia | |
| Qg - Gate Charge | 500 pC | |
| Rds On - Drain-Source Resistance | 2.3 Ohms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 12.5 ns | |
| Id - Continuous Drain Current | 380 mA | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | MOSFETs | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 380mW | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 380mA, 10V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 10 V | |
| Rise Time | 5.1 ns | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Vgs (Max) | ±20V | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-channel Trench MOSFET | |
| Channel Type | N Channel | |
| FET Feature | - | |
| Product Category | MOSFET |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ