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Nexperia USA Inc. NX3008PBKV,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 65 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101, TrenchMOS™ | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 500mW | |
| Terminal Form | FLAT | |
| Pin Count | 6 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 390mW | |
| Turn On Delay Time | 19 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4.1 Ω @ 200mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.72nC @ 4.5V | |
| Rise Time | 30ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 38 ns | |
| Continuous Drain Current (ID) | 220mA | |
| Gate to Source Voltage (Vgs) | 8V | |
| Max Dual Supply Voltage | -30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |