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PBHV8115X,115 Технические параметры

Nexperia USA Inc.  PBHV8115X,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 150V
Number of Elements 1 Element
hFEMin 10
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 1.5W
Frequency 30MHz
Свойство продукта Значение свойства
Base Part Number PBHV8115
Pin Count 3
Power Dissipation 520mW
Gain Bandwidth Product 30MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 50mV @ 20mA, 100mA
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

PBHV8115X,115 Документы

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