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PBHV8215Z,115 Технические параметры

Nexperia USA Inc.  PBHV8215Z,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Supplier Device Package SOT-223
Collector-Emitter Breakdown Voltage 150V
Current-Collector (Ic) (Max) 2A
Number of Elements 1 Element
hFEMin 55
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.45W
Base Part Number PBHV8215
Свойство продукта Значение свойства
Polarity NPN
Element Configuration Single
Power Dissipation 1.45W
Power - Max 1.45W
Gain Bandwidth Product 33MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 280mV @ 400mA, 2A
Voltage - Collector Emitter Breakdown (Max) 150V
Max Breakdown Voltage 150V
Frequency - Transition 33MHz
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 6V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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PBHV8215Z,115 Документы

PBHV8215Z,115 brand manufacturers: Nexperia USA Inc., Anli stock, PBHV8215Z,115 reference price.Nexperia USA Inc.. PBHV8215Z,115 parameters, PBHV8215Z,115 Datasheet PDF and pin diagram description download.You can use the PBHV8215Z,115 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find PBHV8215Z,115 pin diagram and circuit diagram and usage method of function,PBHV8215Z,115 electronics tutorials.You can download from the Anli.