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PBHV8540T,215 Технические параметры

Nexperia USA Inc.  PBHV8540T,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 400V
Number of Elements 1 Element
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Tolerance 5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Axial
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 30MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PBHV8540
Pin Count 3
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Test Current 5mA
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Zener Voltage 6.2V
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 300mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 60mA, 300mA
Transition Frequency 30MHz
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
Outside Diameter 2 mm
Zener Current 5mA
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PBHV8540T,215 Документы

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