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PBSM5240PF,115 Технические параметры
Nexperia USA Inc. PBSM5240PF,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Number of Pins | 6Pins | |
| Number of Elements | 1 Element | |
| Voltage Rated | 40V PNP 30V N-Channel | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Applications | Load Switch | |
| HTS Code | 8541.29.00.75 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating (Amps) | 1.8A PNP 660mA N-Channel | |
| Terminal Position | DUAL | |
| Current Rating | 1.8A | |
| Base Part Number | PBSM5240PF | |
| Pin Count | 6 | |
| Configuration | SINGLE WITH BUILT-IN FET AND DIODE | |
| Power Dissipation | 1.1W | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP, N-Channel | |
| Continuous Drain Current (ID) | 660mA | |
| Gate to Source Voltage (Vgs) | 8V | |
| Transition Frequency | 150MHz | |
| Drain to Source Breakdown Voltage | 30V | |
| DC Current Gain-Min (hFE) | 140 | |
| Drain to Source Resistance | 370mOhm | |
| Collector-Emitter Voltage-Max | 40V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
PBSM5240PF,115 Документы
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