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PBSS4130PANP,115 Технические параметры

Nexperia USA Inc.  PBSS4130PANP,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 1A
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Base Part Number PBSS4130
Свойство продукта Значение свойства
Pin Count 6
Polarity NPN, PNP
Element Configuration Dual
Case Connection COLLECTOR
Power - Max 510mW
Transistor Application SWITCHING
Gain Bandwidth Product 125MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 100mV @ 50mA, 500mA
Transition Frequency 165MHz
Frequency - Transition 165MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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