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PBSS5112PAP,115 Технические параметры

Nexperia USA Inc.  PBSS5112PAP,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6Pins
Current-Collector (Ic) (Max) 1A
hFEMin 190
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Свойство продукта Значение свойства
Base Part Number PBSS5112
Pin Count 6
Polarity PNP
Element Configuration Dual
Power - Max 510mW
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) -120V
Max Collector Current -1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 480mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 120V
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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PBSS5112PAP,115 Документы

PBSS5112PAP,115 brand manufacturers: Nexperia USA Inc., Anli stock, PBSS5112PAP,115 reference price.Nexperia USA Inc.. PBSS5112PAP,115 parameters, PBSS5112PAP,115 Datasheet PDF and pin diagram description download.You can use the PBSS5112PAP,115 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find PBSS5112PAP,115 pin diagram and circuit diagram and usage method of function,PBSS5112PAP,115 electronics tutorials.You can download from the Anli.