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PBSS5130PAP,115 Технические параметры

Nexperia USA Inc.  PBSS5130PAP,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6Pins
Current-Collector (Ic) (Max) 1A
hFEMin 250
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Свойство продукта Значение свойства
Base Part Number PBSS5130
Pin Count 6
Polarity PNP
Element Configuration Dual
Power - Max 510mW
Gain Bandwidth Product 125MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) -30V
Max Collector Current -2A
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 280mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 30V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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PBSS5130PAP,115 Документы

PBSS5130PAP,115 brand manufacturers: Nexperia USA Inc., Anli stock, PBSS5130PAP,115 reference price.Nexperia USA Inc.. PBSS5130PAP,115 parameters, PBSS5130PAP,115 Datasheet PDF and pin diagram description download.You can use the PBSS5130PAP,115 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find PBSS5130PAP,115 pin diagram and circuit diagram and usage method of function,PBSS5130PAP,115 electronics tutorials.You can download from the Anli.