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PBSS5160DS,115 Технические параметры

Nexperia USA Inc.  PBSS5160DS,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Surface Mount YES
Package / Case SC-74, SOT-457
Mounting Type Surface Mount
Number of Pins 6Pins
Transistor Element Material SILICON
hFEMin 100
Number of Elements 2 Elements
Current-Collector (Ic) (Max) 770mA
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PBSS5160DS
Pin Count 6
Polarity PNP
Power Dissipation 290mW
Power - Max 420mW
Transistor Application SWITCHING
Gain Bandwidth Product 185MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) -60V
Max Collector Current -1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 330mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Transition Frequency 220MHz
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
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PBSS5160DS,115 Документы

PBSS5160DS,115 brand manufacturers: Nexperia USA Inc., Anli stock, PBSS5160DS,115 reference price.Nexperia USA Inc.. PBSS5160DS,115 parameters, PBSS5160DS,115 Datasheet PDF and pin diagram description download.You can use the PBSS5160DS,115 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find PBSS5160DS,115 pin diagram and circuit diagram and usage method of function,PBSS5160DS,115 electronics tutorials.You can download from the Anli.