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PBSS5160PAPSX Технические параметры

Nexperia USA Inc.  PBSS5160PAPSX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Power Dissipation 370mW
Terminal Form NO LEAD
Свойство продукта Значение свойства
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code S-PDSO-N6
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 370mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 50mA, 1A
Transition Frequency 125MHz
Max Breakdown Voltage 60V
Frequency - Transition 125MHz
RoHS Status ROHS3 Compliant

PBSS5160PAPSX Документы

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