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PBSS5220PAPSX Технические параметры

Nexperia USA Inc.  PBSS5220PAPSX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Power Dissipation 370mW
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code S-PDSO-N6
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 370mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 390mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 390mV @ 200mA, 2A
Transition Frequency 95MHz
Max Breakdown Voltage 20V
Frequency - Transition 95MHz
RoHS Status ROHS3 Compliant
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PBSS5220PAPSX Документы

PBSS5220PAPSX brand manufacturers: Nexperia USA Inc., Anli stock, PBSS5220PAPSX reference price.Nexperia USA Inc.. PBSS5220PAPSX parameters, PBSS5220PAPSX Datasheet PDF and pin diagram description download.You can use the PBSS5220PAPSX Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find PBSS5220PAPSX pin diagram and circuit diagram and usage method of function,PBSS5220PAPSX electronics tutorials.You can download from the Anli.