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PBSS5260PAP,115 Технические параметры

Nexperia USA Inc.  PBSS5260PAP,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6Pins
Current-Collector (Ic) (Max) 2A
Number of Elements 2 Elements
hFEMin 170
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Свойство продукта Значение свойства
Frequency 100MHz
Base Part Number PBSS5260PAP
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 2W
Power - Max 510mW
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 60V
Max Collector Current -3A
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -7V
Radiation Hardening No
RoHS Status ROHS3 Compliant

PBSS5260PAP,115 Документы

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