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PDTA123JT,215 Технические параметры

Nexperia USA Inc.  PDTA123JT,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
HTS Code 8541.21.00.95
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTA123
Pin Count 3
Qualification Status Not Qualified
Polarity PNP
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 180MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status ROHS3 Compliant

PDTA123JT,215 Документы

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