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PDTB114ETR Технические параметры

Nexperia USA Inc.  PDTB114ETR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package TO-236AB
Collector-Emitter Breakdown Voltage 50V
Current-Collector (Ic) (Max) 500mA
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 320mW
Power - Max 320mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 100mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 140MHz
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
RoHS Status ROHS3 Compliant
Просмотр сходства

PDTB114ETR Документы

PDTB114ETR brand manufacturers: Nexperia USA Inc., Anli stock, PDTB114ETR reference price.Nexperia USA Inc.. PDTB114ETR parameters, PDTB114ETR Datasheet PDF and pin diagram description download.You can use the PDTB114ETR Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTB114ETR pin diagram and circuit diagram and usage method of function,PDTB114ETR electronics tutorials.You can download from the Anli.