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PDTC114EM,315 Технические параметры

Nexperia USA Inc.  PDTC114EM,315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 30
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 250mW
Свойство продукта Значение свойства
Terminal Position BOTTOM
Base Part Number PDTC114
Pin Count 3
Polarity NPN
Element Configuration Single
Power Dissipation 250mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Transition Frequency 230MHz
Emitter Base Voltage (VEBO) 10V
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PDTC114EM,315 Документы

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