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- PDTC115EUF
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PDTC115EUF Технические параметры
Nexperia USA Inc. PDTC115EUF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 20mA | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| Part Status | Active | |
| Number of Terminations | 3Terminations | |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 1μA | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250μA, 5mA | |
| Resistor - Base (R1) | 100 k Ω | |
| Resistor - Emitter Base (R2) | 100 k Ω | |
| Collector-Emitter Voltage-Max | 50V | |
| RoHS Status | ROHS3 Compliant |
PDTC115EUF Документы
- DatasheetsPDTC115E Series
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