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PDTC123JT,235 Технические параметры

Nexperia USA Inc.  PDTC123JT,235 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package TO-236AB
Collector-Emitter Breakdown Voltage 50V
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Base Part Number PDTC123
Свойство продукта Значение свойства
Max Output Current 100mA
Operating Supply Voltage 50V
Polarity NPN
Element Configuration Single
Power - Max 250mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PDTC123JT,235 Документы

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