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PEMH13,115 Технические параметры
Nexperia USA Inc. PEMH13,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Tape & Reel (TR) | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 10 | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 6 | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| Power Dissipation | 300mW | |
| Transistor Application | SWITCHING | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 1μA | |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250μA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 4.7k Ω | |
| Resistor - Emitter Base (R2) | 47k Ω | |
| RoHS Status | ROHS3 Compliant |
PEMH13,115 Документы
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