Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
PHKD3NQ10T,518 Технические параметры
Nexperia USA Inc. PHKD3NQ10T,518 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 540.001716mg | |
| Turn Off Delay Time | 20 ns | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | TrenchMOS™ | |
| Published | 2010 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) | |
| Max Power Dissipation | 2W | |
| Pin Count | 8 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Turn On Delay Time | 6 ns | |
| Power - Max | 2W | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 633pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V | |
| Rise Time | 12ns | |
| Fall Time (Typ) | 10 ns | |
| Continuous Drain Current (ID) | 3A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 100V | |
| FET Feature | Logic Level Gate | |
| RoHS Status | RoHS Compliant |
PHKD3NQ10T,518 Документы
- DatasheetsPHKD3NQ10T
- PCN Obsolescence/ EOLMult Devices EOL 30/Jun/2018 Mult Devices EOL 12/Jul/2018
- PCN PackagingLabel Chg 12/Mar/2017
- RohsStatementNXP-Semiconductors-company-12.pdf
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ