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PMCPB5530X,115 Технические параметры

Nexperia USA Inc.  PMCPB5530X,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4A Ta 3.4A Ta
Number of Elements 2 Elements
Turn Off Delay Time 40 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 490mW
Pin Count 6
Number of Channels 2Channels
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 21.7nC @ 4.5V
Rise Time 15ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) -650mV
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PMCPB5530X,115 Документы

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