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PMCXB1000UEZ Технические параметры

Nexperia USA Inc.  PMCXB1000UEZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 590mA Ta 410mA Ta
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Свойство продукта Значение свойства
Reference Standard IEC-60134
JESD-30 Code R-PDSO-N6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 285mW Ta
FET Type N and P-Channel Complementary
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 670m Ω @ 590mA, 4.5V, 1.4 Ω @ 410mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30.3pF @ 15V 43.2pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 1.05nC @ 4.5V, 1.2nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 0.59A
Drain-source On Resistance-Max 0.9Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant

PMCXB1000UEZ Документы

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