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Nexperia USA Inc. PMCXB900UELZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-XFDFN Exposed Pad | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2016 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Max Power Dissipation | 380mW | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Pin Count | 6 | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-PDSO-N6 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Power - Max | 380mW | |
| FET Type | N and P-Channel Complementary | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 620m Ω @ 600mA, 4.5V | |
| Vgs(th) (Max) @ Id | 950mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 600mA | |
| Drain Current-Max (Abs) (ID) | 0.6A | |
| Drain-source On Resistance-Max | 0.62Ohm | |
| DS Breakdown Voltage-Min | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant |