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PMDPB85UPE,115 Технические параметры
Nexperia USA Inc. PMDPB85UPE,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Number of Pins | 6Pins | |
| Turn Off Delay Time | 47 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 515mW | |
| Pin Count | 6 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 6 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 103m Ω @ 1.3A, 4.5V | |
| Vgs(th) (Max) @ Id | 950mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 514pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V | |
| Rise Time | 12ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 21 ns | |
| Continuous Drain Current (ID) | 2.9A | |
| Gate to Source Voltage (Vgs) | 8V | |
| Max Dual Supply Voltage | -20V | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
PMDPB85UPE,115 Документы
- DatasheetsPMDPB85UPE
- PCN PackagingLighter Reels 02/Jan/2014 Label Chg 12/Mar/2017
- RohsStatementNXP-Semiconductors-company-12.pdf
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