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PMDPB95XNE2X Технические параметры

Nexperia USA Inc.  PMDPB95XNE2X technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.7A Ta
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Свойство продукта Значение свойства
Reference Standard IEC-60134
JESD-30 Code S-PDSO-N6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 510mW Ta
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 258pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 2.7A
Drain-source On Resistance-Max 0.099Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant

PMDPB95XNE2X Документы

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